PART |
Description |
Maker |
IHW20T120 |
IGBT in Trench and Fieldstop Tech
|
Infineon
|
APT25GN120B APT25GN120BG APT25GN120S APT25GN120SG |
Insulated Gate Bipolar Transistor-Trench Fieldstop Low Frequency; Package: D3 [S]; BV(CES) (V): 1200; VCE(sat) (V): 1.7; IC (A): 33; 67 A, 1200 V, N-CHANNEL IGBT Utilizing the latest Field Stop and Trench Gate technologies
|
Microsemi, Corp. Microsemi Corporation
|
MGV1203R68M-10 |
this print is the property of laird tech
|
Laird Tech Smart Techno...
|
HZ0603B102R-10 |
this print is the property of laird tech
|
Laird Tech Smart Techno...
|
LFB090050-000 |
this print is the property of laird tech
|
Laird Tech Smart Techno...
|
LFB127079-000 |
this print is the property of laird tech
|
Laird Tech Smart Techno...
|
28C0236-0BS-10 |
this print is the property of laird tech
|
Laird Tech Smart Techno...
|
CMX1616Z171B-10 |
this print is the property of laird tech
|
Laird Tech Smart Techno...
|
MI0603K300R-10 |
this print is the property of laird tech
|
Laird Tech Smart Techno...
|
29F0418-0SR-10 |
this print is the property of laird tech
|
Laird Tech Smart Techno...
|
28C0236-0EW-10 |
this print is the property of laird tech
|
Laird Tech Smart Techno...
|
28C0236-0JW-10 |
this print is the property of laird tech
|
Laird Tech Smart Techno...
|